Infineon IPS80R750P7

Infineon · FETs & Power MOSFETs · MPN IPS80R750P7

No reviews yet — be the first to review Infineon IPS80R750P7.

Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)460pF

Technical details

800V 7A 3V 51W 750mΩ@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs