Infineon · FETs & Power MOSFETs · MPN IPS80R1K4P7
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250pF |
800V 4A 3V 32W 1.4Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS