Infineon · FETs & Power MOSFETs · MPN IPS80R1K2P7
No reviews yet — be the first to review Infineon IPS80R1K2P7.
| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
800V 4.5A 3V 37W 1.2Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS