Infineon IPS70R360P7S

Infineon · FETs & Power MOSFETs · MPN IPS70R360P7S

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Specifications

Gate Charge(Qg)16.4nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)12.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation59.5W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)517pF

Technical details

N-Channel 700V 12.5A 59.5W Through Hole TO-251-3

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