Infineon IPS70R2K0CEE8211AKMA1

Infineon · FETs & Power MOSFETs · MPN IPS70R2K0CEE8211AKMA1

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Specifications

Gate Charge(Qg)7.8nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)14pF
Current - Continuous Drain(Id)4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation42W
RDS(on)2Ω@10V
Input Capacitance(Ciss)163pF

Technical details

700V 4A 3.5V 42W 2Ω@10V Single FETs, MOSFETs RoHS

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