Infineon · FETs & Power MOSFETs · MPN IPS70R1K4P7SAKMA1
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| Gate Charge(Qg) | 4.7nC@10V |
|---|---|
| Drain to Source Voltage | 700V |
| Output Capacitance(Coss) | 3pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 22.7W |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 158pF |
| Type | N-Channel |
700V 4A 3.5V 22.7W 1.4Ω@10V 1 N-channel N-Channel TO-251(IPAK) Single FETs, MOSFETs RoHS