Infineon · FETs & Power MOSFETs · MPN IPS65R950C6AKMA1
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| Gate Charge(Qg) | 15.3nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 58.5pF |
| RDS(on) | 950mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 328pF |
650V 4.5A 3.5V 37W 950mΩ@10V 1 N-channel TO-251-3-11 Single FETs, MOSFETs RoHS