Infineon · FETs & Power MOSFETs · MPN IPS65R1K4C6
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| Gate Charge(Qg) | 10.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
650V 3.2A 2.5V 28W 1.4Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS