Infineon IPS60R400CE

Infineon · FETs & Power MOSFETs · MPN IPS60R400CE

No reviews yet — be the first to review Infineon IPS60R400CE.

Specifications

Gate Charge(Qg)32nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)14.7A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation112W
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF

Technical details

650V 14.7A 2.5V 112W 400mΩ@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs