Infineon IPS135N03LG

Infineon · FETs & Power MOSFETs · MPN IPS135N03LG

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation31W
RDS(on)13.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16pF
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

30V 30A 2.2V 31W 13.5mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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