Infineon IPS105N03LG

Infineon · FETs & Power MOSFETs · MPN IPS105N03LG

No reviews yet — be the first to review Infineon IPS105N03LG.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14nC@10V
Output Capacitance(Coss)610pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

30V 35A 2.2V 38W 10.5mΩ@10V 1 N-channel TO-251-3-11 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs