Infineon IPS050N03LG

Infineon · FETs & Power MOSFETs · MPN IPS050N03LG

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)31nC@10V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

30V 50A 2.2V 68W 5mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS

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