Infineon · FETs & Power MOSFETs · MPN IPQC65R017CFD7XTMA1
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| Gate Charge(Qg) | 236nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 136A |
| Output Capacitance(Coss) | 177pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 694W |
| RDS(on) | 17mΩ@10V |
| Input Capacitance(Ciss) | 12.338nF |
| Type | N-Channel |
650V 136A 4.5V 694W 17mΩ@10V N-Channel Single FETs, MOSFETs RoHS