Infineon IPP80R900P7XKSA1

Infineon · FETs & Power MOSFETs · MPN IPP80R900P7XKSA1

No reviews yet — be the first to review Infineon IPP80R900P7XKSA1.

Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation45W
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

N-Channel 800V 6A 45W Through Hole TO-220-3

Related FETs & Power MOSFETs