Infineon IPP80R1K2P7XKSA1

Infineon · FETs & Power MOSFETs · MPN IPP80R1K2P7XKSA1

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)11nC@10V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)102pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)300pF
TypeN-Channel

Technical details

N-Channel 800V 4.5A 37W Through Hole TO-220-3

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