Infineon IPP80N06S2-08

Infineon · FETs & Power MOSFETs · MPN IPP80N06S2-08

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Specifications

Drain to Source Voltage55V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation215W
RDS(on)8mΩ@10V
Number1 N-channel

Technical details

55V 80A 4V 215W 8mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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