Infineon IPP80N04S4-03

Infineon · FETs & Power MOSFETs · MPN IPP80N04S4-03

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.05nF

Technical details

40V 80A 3V 94W 3.2mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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