Infineon IPP80N03S4L03AKSA1

Infineon · FETs & Power MOSFETs · MPN IPP80N03S4L03AKSA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)140nC@10V
Output Capacitance(Coss)2.5nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.75nF
TypeN-Channel

Technical details

30V 80A 2.2V 136W 2.4mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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