Infineon · FETs & Power MOSFETs · MPN IPP80CN10NGXKSA1
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 101pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 716pF |
| Type | N-Channel |
100V 13A 4V 31W 80mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS