Infineon IPP70N04S3-07

Infineon · FETs & Power MOSFETs · MPN IPP70N04S3-07

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

40V 80A 4V 79W 6.2mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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