Infineon · FETs & Power MOSFETs · MPN IPP65R310CFD
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 104.2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 310mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
| Type | N-Channel |
650V 11.4A 4.5V 104.2W 310mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS