Infineon IPP65R150CFD

Infineon · FETs & Power MOSFETs · MPN IPP65R150CFD

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Specifications

Gate Charge(Qg)86nC
Drain to Source Voltage700V
Current - Continuous Drain(Id)22.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation195.3W
Reverse Transfer Capacitance (Crss@Vds)420pF
RDS(on)150mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF

Technical details

700V 22.4A 195.3W Through Hole TO-220

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