Infineon · FETs & Power MOSFETs · MPN IPP65R110CFDA
No reviews yet — be the first to review Infineon IPP65R110CFDA.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 118nC@10V |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 31.2A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 277.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 553pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.24nF |
650V 31.2A 4V 277.8W 110mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS