Infineon · FETs & Power MOSFETs · MPN IPP65R090CFD7XKSA1
No reviews yet — be the first to review Infineon IPP65R090CFD7XKSA1.
| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 127W |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.513nF |
| Type | N-Channel |
650V 25A 4.5V 127W 90mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS