Infineon · FETs & Power MOSFETs · MPN IPP65R045C7
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 93nC@10V |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.63nF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.34nF |
650V 46A 4V 227W 45mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS