Infineon · FETs & Power MOSFETs · MPN IPP65R041CFD7XKSA1
No reviews yet — be the first to review Infineon IPP65R041CFD7XKSA1.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.825nF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.975nF |
N-Channel 650V 32A 227W Through Hole TO-220-3