Infineon · FETs & Power MOSFETs · MPN IPP60R750E6
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 17.2nC@10V |
| Output Capacitance(Coss) | 27pF |
| Current - Continuous Drain(Id) | 5.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 48W |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 373pF |
600V 5.7A 3.5V 48W 750mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS