Infineon · FETs & Power MOSFETs · MPN IPP60R600P7
No reviews yet — be the first to review Infineon IPP60R600P7.
| Gate Charge(Qg) | 9nC@400V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 363pF |
650V 4A 3.5V 30W 600mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS