Infineon · FETs & Power MOSFETs · MPN IPP60R520E6
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| Gate Charge(Qg) | 23.4nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 520mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 512pF |
600V 5.1A 3.5V 66W 520mΩ@10V TO-220-3 Single FETs, MOSFETs RoHS