Infineon IPP60R450E6

Infineon · FETs & Power MOSFETs · MPN IPP60R450E6

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)9.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation74W
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)620pF

Technical details

600V 9.2A 3.5V 74W 450mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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