Infineon IPP60R385CP

Infineon · FETs & Power MOSFETs · MPN IPP60R385CP

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)385mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF

Technical details

650V 9A 2.5V 83W 385mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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