Infineon IPP60R190P6

Infineon · FETs & Power MOSFETs · MPN IPP60R190P6

No reviews yet — be the first to review Infineon IPP60R190P6.

Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)76pF
Current - Continuous Drain(Id)20.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation151W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.75nF

Technical details

N-Channel 600V 20.2A 151W Through Hole TO-220

Related FETs & Power MOSFETs