Infineon IPP60R165CPXKSA1

Infineon · FETs & Power MOSFETs · MPN IPP60R165CPXKSA1

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation192W
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

650V 21A 2.5V 192W 165mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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