Infineon · FETs & Power MOSFETs · MPN IPP60R160P7XKSA1
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 81W |
| Reverse Transfer Capacitance (Crss@Vds) | 454pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.317nF |
N-Channel 600V 20A 81W Through Hole TO-220-3