Infineon IPP60R099P6XKSA1

Infineon · FETs & Power MOSFETs · MPN IPP60R099P6XKSA1

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)37.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.33nF

Technical details

N-Channel 600V 37.9A 278W Through Hole TO-220-3

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