Infineon · FETs & Power MOSFETs · MPN IPP60R099CPA
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 255W |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
600V 31A 3.5V 255W 105mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS