Infineon · FETs & Power MOSFETs · MPN IPP60R099CP
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| Gate Charge(Qg) | 60nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 255W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 99mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
| Vgs | ±20V |
N-Channel 650V 31A 255W Through Hole TO-220