Infineon · FETs & Power MOSFETs · MPN IPP60R080P7
No reviews yet — be the first to review Infineon IPP60R080P7.
| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 129W |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
650V 110A 3.5V 129W 80mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS