Infineon IPP60R022S7

Infineon · FETs & Power MOSFETs · MPN IPP60R022S7

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Specifications

Gate Charge(Qg)150nC@12V
Drain to Source Voltage600V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation390W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)22mΩ@12V
Number1 N-channel
Input Capacitance(Ciss)5.639nF

Technical details

600V 23A 3.5V 390W 22mΩ@12V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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