Infineon · FETs & Power MOSFETs · MPN IPP60R016CM8XKSA1
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| Gate Charge(Qg) | 171nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 91pF |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.545nF |
| Type | N-Channel |
600V 135A 4.2V 625W 13mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS