Infineon IPP50R199CPXKSA1

Infineon · FETs & Power MOSFETs · MPN IPP50R199CPXKSA1

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Specifications

Drain to Source Voltage550V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation139W
RDS(on)199mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

550V 17A 3.5V 139W 199mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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