Infineon IPP50R140CP

Infineon · FETs & Power MOSFETs · MPN IPP50R140CP

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.54nF

Technical details

N-Channel 500V 23A 192W Through Hole TO-220

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