Infineon · FETs & Power MOSFETs · MPN IPP50CN10NGHKSA1
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 160pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 49mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.09nF |
| Type | N-Channel |
100V 20A 4V 44W 49mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS