Infineon IPP410N30N

Infineon · FETs & Power MOSFETs · MPN IPP410N30N

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage300V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)41mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.18nF

Technical details

N-Channel 300V 44A 300W Through Hole TO-220-3

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