Infineon · FETs & Power MOSFETs · MPN IPP410N30N
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| Gate Charge(Qg) | 87nC@10V |
|---|---|
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 44A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.18nF |
N-Channel 300V 44A 300W Through Hole TO-220-3