Infineon IPP330P10NMAKSA1

Infineon · FETs & Power MOSFETs · MPN IPP330P10NMAKSA1

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Specifications

Gate Charge(Qg)236nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)750pF
Current - Continuous Drain(Id)62A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)33mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)11nF
TypeP-Channel

Technical details

P-Channel 100V 62A 300W Through Hole TO-220-3

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