Infineon IPP320N20N3GXKSA1

Infineon · FETs & Power MOSFETs · MPN IPP320N20N3GXKSA1

No reviews yet — be the first to review Infineon IPP320N20N3GXKSA1.

Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
TypeN-Channel

Technical details

N-Channel 200V 34A 136W Through Hole TO-220-3

Related FETs & Power MOSFETs