Infineon · FETs & Power MOSFETs · MPN IPP200N25N3 G
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| Gate Charge(Qg) | 64nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 297pF |
| Current - Continuous Drain(Id) | 64A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 17.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.34nF |
| Type | N-Channel |
250V 64A 3V 300W 17.5mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS