Infineon IPP200N15N3G

Infineon · FETs & Power MOSFETs · MPN IPP200N15N3G

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)214pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.82nF
TypeN-Channel

Technical details

N-Channel 150V 50A 150W Through Hole TO-220-3

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