Infineon · FETs & Power MOSFETs · MPN IPP16CN10NGXKSA1
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 484pF |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 16.5mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 3.22nF |
| Type | - |
100V 53A 4V 100W 16.5mΩ@10V TO-220 Single FETs, MOSFETs RoHS