Infineon · FETs & Power MOSFETs · MPN IPP16CN10NGHKSA1
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 16.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.22nF |
100V 53A 4V 100W 16.5mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS